Details

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BUY BUK9535-55A https://www.utsource.net/itm/p/12607796.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Continuous Drain Current	ID	-	40	-	A	Ta = 25°C, VGS = 10V
Pulse Drain Current	ID(Pulse)	-	70	-	A	tP = 10μs, Duty Cycle ≤ 1%
Gate-Source Voltage	VGS	-8	0	16	V
Drain-Source Breakdown Voltage	BVdss	-	55	-	V
Gate-Source Leakage Current	IGSS	-	±100	-	nA	VGS = ±10V, Ta = 25°C
Drain-Source On-State Resistance	RDS(on)	-	0.035	-	Ω	VGS = 10V, ID = 40A, Ta = 25°C
Gate Charge	Qg	-	105	-	nC	VGS = 10V, ID = 40A
Input Capacitance	Ciss	-	1450	-	pF	VDS = 15V, f = 1MHz
Output Capacitance	Coss	-	330	-	pF	VDS = 15V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	250	-	pF	VDS = 15V, f = 1MHz
Total Switching Energy	Esw	-	200	-	nJ	VDS = 55V, ID = 40A, VGS = 10V
Turn-On Delay Time	td(on)	-	13	-	ns	VGS = 10V, ID = 40A, RL = 5Ω
Rise Time	tr	-	18	-	ns	VGS = 10V, ID = 40A, RL = 5Ω
Turn-Off Delay Time	td(off)	-	16	-	ns	VGS = 10V, ID = 40A, RL = 5Ω
Fall Time	tf	-	22	-	ns	VGS = 10V, ID = 40A, RL = 5Ω

Instructions for Use:

1. Operating Conditions:

   • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating of 55V.
   • The continuous drain current (ID) should not exceed 40A at 25°C ambient temperature.
   • For pulse applications, the peak drain current (ID(Pulse)) can reach up to 70A with a pulse width of 10μs and a duty cycle of ≤ 1%.

2. Thermal Management:

   • Proper heat sinking is essential to maintain the junction temperature within safe limits, especially under high current or high-frequency switching conditions.
   • Refer to the thermal resistance data provided by the manufacturer to design an appropriate heat sink.

3. Gate Drive:

   • Apply a gate-source voltage (VGS) of 10V to ensure the MOSFET is fully on and minimize RDS(on).
   • Avoid exceeding the maximum VGS of 16V to prevent damage to the gate oxide.
   • For reliable operation, use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Storage and Handling:

   • Store the device in a dry environment to prevent moisture absorption.
   • Handle the device with care to avoid static discharge, which can damage the gate oxide.

5. Testing:

   • Before integrating the MOSFET into a circuit, perform initial tests to verify the device parameters such as RDS(on), VGS, and ID.
   • Use a suitable test setup to measure the switching characteristics and ensure they meet the specified values.

6. Application Notes:

   • The BUK9535-55A is suitable for high-frequency switching applications, such as DC-DC converters, motor drivers, and power supplies.
   • For detailed application notes and design guidelines, refer to the datasheet and technical documentation provided by the manufacturer.

(For reference only)