Details

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BUY IXTP50N25T https://www.utsource.net/itm/p/12607802.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	250	V	IC = 0, Tj = 25掳C
Emitter-Collector Voltage	VECS	-	-	250	V	IE = 0, Tj = 25掳C
Gate-Emitter Voltage	VGE	-15	-	15	V	IG = 1 mA, Tj = 25掳C
Continuous Collector Current	IC	-	-	50	A	VCE = 25 V, TC = 25掳C
Pulse Collector Current	ICM	-	-	150	A	VCE = 25 V, TC = 25掳C, tp = 10 ms
Power Dissipation	PT	-	-	125	W	TC = 25掳C
Junction Temperature	Tj	-	-	175	掳C	-
Storage Temperature	Tstg	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage power dissipation.
   • Handle with care to avoid static damage.

2. Biasing:

   • Apply gate-emitter voltage (V_GE) within the specified range to ensure reliable operation.
   • Use appropriate gate resistors to control turn-on and turn-off times.

3. Current Limiting:

   • Do not exceed the continuous collector current (I_C) or pulse collector current (I_CM) ratings.
   • Use current limiting resistors if necessary.

4. Thermal Management:

   • Monitor junction temperature (T_j) to prevent overheating.
   • Ensure adequate cooling, especially during high-power operations.

5. Storage:

   • Store in a dry environment within the storage temperature range (T_stg).

6. Testing:

   • Perform initial testing at room temperature and gradually increase load to verify performance.
   • Regularly check for signs of wear or damage.

7. Safety:

   • Always follow safety guidelines when handling high-voltage and high-current components.
   • Use appropriate protective equipment.

(For reference only)