Details

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BUY 2SK2648 https://www.utsource.net/itm/p/12607807.html

Below is the parameter table and instructions for the 2SK2648 MOSFET:

2SK2648 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	-	500	-	V
Gate-Source Voltage	V(GS)	-	卤20	-	V
Continuous Drain Current	I(D)	-	10	-	A
Pulse Drain Current (t = 10 ms)	I(DM)	-	20	-	A
Power Dissipation	P(TOT)	-	125	-	W
Total Gate Charge	Q(G)	-	100	-	nC
Input Capacitance	Ciss	-	1500	-	pF
Output Capacitance	Coss	-	300	-	pF
Reverse Transfer Capacitance	Crss	-	400	-	pF
On-State Resistance	R(DS(on))	-	0.5	-	惟
Threshold Voltage	Vth	2	4	6	V
Maximum Junction Temperature	Tj	-	-	175	掳C
Storage Temperature Range	Tstg	-55	-	150	掳C

Instructions for Use

1. Handling Precautions:

   • The 2SK2648 is sensitive to electrostatic discharge (ESD). Handle the device with proper ESD protection.
   • Avoid touching the leads directly with bare hands.

2. Mounting:

   • Ensure that the device is mounted on a heatsink to manage heat dissipation effectively.
   • Use thermal compound between the device and the heatsink to improve thermal conductivity.

3. Biasing:

   • Apply the gate-source voltage (V(GS)) carefully to avoid exceeding the maximum ratings.
   • Use a gate resistor to limit the current and protect the gate from overvoltage.

4. Operation:

   • Ensure that the drain-source voltage (V(DS)) does not exceed the maximum rating of 500V.
   • Keep the drain current (I(D)) within the continuous and pulse limits to prevent damage.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow the storage temperature range (-55掳C to 150掳C) to ensure long-term reliability.

6. Testing:

   • Use a multimeter or an oscilloscope to verify the device parameters before installation.
   • Perform functional tests under controlled conditions to ensure proper operation.

By following these instructions, you can ensure the reliable and safe operation of the 2SK2648 MOSFET.

(For reference only)