Details

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BUY BTW68-800. https://www.utsource.net/itm/p/12607815.html

Parameter	Symbol	Value	Unit
Maximum Repetitive Peak Off-State Voltage	V DRM	800	V
Maximum RMS On-State Current (115掳C case temperature)	I T(RMS)	68	A
Maximum Non-Repetitive Peak On-State Current (10 ms, 25掳C case temperature)	I TSM	340	A
Maximum Junction Temperature	T J	125	掳C
Storage Temperature Range	T STG	-40 to +125	掳C
Gate Trigger Current (Minimum)	I GT	10	mA
Holding Current (Minimum)	I H	5	mA
Power Dissipation at Maximum Case Temperature	P D	770	W

Instructions for Use:

1. Mounting:

   • Ensure the BTW68-800 is mounted on a heatsink to maintain the junction temperature within the specified limits.
   • Use thermal paste between the device and the heatsink to improve heat dissipation.

2. Gate Drive:

   • Apply a gate trigger current (I GT) of at least 10 mA to ensure reliable turn-on.
   • The gate trigger voltage should be sufficient to drive the required current.

3. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive currents. The maximum non-repetitive peak on-state current (I TSM) is 340 A for 10 ms at 25掳C case temperature.

4. Temperature Management:

   • Monitor the case temperature to ensure it does not exceed 115掳C for continuous operation.
   • The storage temperature range is -40掳C to +125掳C; ensure the device is stored within this range.

5. Handling:

   • Handle the device with care to avoid mechanical stress.
   • Use appropriate ESD protection to prevent damage from static electricity.

6. Testing:

   • Before installing the device in a circuit, test it under controlled conditions to verify its performance and reliability.

7. Compliance:

   • Ensure that the application complies with relevant safety and regulatory standards.

(For reference only)