Details
BUY FDMS8333L https://www.utsource.net/itm/p/12607837.html
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5V, ID = 12A | - | 2.3 | - | mΩ |
| Gate Threshold Voltage | VGS(th) | ID = 1mA, TA = 25°C | 0.8 | - | 1.6 | V |
| Continuous Drain Current | ID | TC = 70°C | - | - | 16 | A |
| Pulse Drain Current | ID(pulse) | TP = 10μs, Duty Cycle = 1% | - | - | 56 | A |
| Power Dissipation | PD | TC = 70°C | - | - | 2.2 | W |
| Junction Temperature | TJ | - | -20 | - | 150 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- The FDMS8333L is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
Mounting and Assembly:
- Ensure proper heat sinking if operating near the maximum continuous drain current or power dissipation limits.
- Follow standard surface mount technology (SMT) assembly guidelines.
Biasing and Operation:
- Apply gate-source voltage (VGS) within specified limits to avoid damaging the device.
- For optimal performance, operate within the recommended junction temperature range.
Testing:
- During testing, ensure that all parameters are within the specified limits to maintain reliability and performance.
Storage:
- Store in a dry environment within the specified storage temperature range to prevent damage.
For detailed application notes and more specific guidelines, refer to the manufacturer’s datasheet.
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