Details

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BUY 5R500CE https://www.utsource.net/itm/p/12607857.html

Parameter	Symbol	Min	Typical	Max	Unit
Rated Voltage	VBR(CEO)	-	500	-	V
Collector-Emitter Saturation Voltage	VCE(sat)	-	1.2	2.0	V
Continuous Collector Current	IC	-	5.0	-	A
Peak Collector Current	IC(peak)	-	10.0	-	A
Base-Emitter Saturation Voltage	VBE(sat)	-	1.8	2.5	V
Maximum Power Dissipation	PT	-	65	-	W
Junction Temperature	TJ	-25	25	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use recommended mounting torque for screws to avoid damage.

2. Biasing:

   • Apply sufficient base current to ensure the transistor is fully saturated when in the on state.
   • Avoid overdriving the base to prevent excessive power dissipation.

3. Operation:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Operate within the specified temperature range to ensure reliable performance.

4. Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress or damage to leads.

5. Testing:

   • Use appropriate test equipment and procedures to avoid damaging the device.
   • Refer to the datasheet for specific test conditions and methods.

(For reference only)