Details

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BUY MTP3055V. https://www.utsource.net/itm/p/12607858.html

Parameter	Description	Value	Unit
VDSS	Drain-Source Voltage	55	V
ID	Continuous Drain Current	30	A
PD	Total Power Dissipation	1.6	W
RDS(on)	On-State Resistance	8.5	m惟
Qg	Gate Charge	47	nC
VGS(th)	Gate-Source Threshold Voltage	2.0 to 4.0	V
TJ	Junction Temperature Range	-55 to +150	掳C
Tstg	Storage Temperature Range	-55 to +150	掳C
Package	Type of Package	TO-220	-

Instructions for Use:

1. Mounting: Ensure the MTP3055V is mounted on a heatsink if operating near maximum power dissipation to maintain safe junction temperatures.
2. Gate Drive: Apply gate-source voltage within the specified threshold range (2.0 to 4.0V) for reliable switching operation.
3. Overcurrent Protection: Design circuits with overcurrent protection mechanisms to prevent damage from excessive drain current.
4. Thermal Management: Monitor junction temperature and ensure it remains within the operational limits (-55掳C to +150掳C).
5. Storage Conditions: Store in a dry environment within the temperature range of -55掳C to +150掳C.
6. Handling Precautions: Handle with care to avoid static discharge which can damage the MOSFET. Use appropriate ESD protection measures.

(For reference only)