Details

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BUY 2SC5552 https://www.utsource.net/itm/p/12607866.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	80	V	Maximum voltage between collector and emitter with base open
Collector-Base Voltage	VCBO	-	-	100	V	Maximum voltage between collector and base with emitter open
Emitter-Base Voltage	VEBO	-	-	6	V	Maximum voltage between emitter and base with collector open
Collector Current	IC	-	-	15	A	Maximum continuous collector current
Power Dissipation	PT	-	-	130	W	Maximum power dissipation at TA = 25掳C
Operating Temperature	TOP	-55	-	150	掳C	Operating temperature range
Storage Temperature	TS	-65	-	200	掳C	Storage temperature range
Transition Frequency	fT	-	300	-	MHz	Frequency at which hfe drops to 1
DC Current Gain	hFE	100	300	700	-	Typical DC current gain

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings specified in the table.
   • Use proper heat sinks when operating at high power levels to prevent overheating.
   • Handle the transistor with care to avoid damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure good thermal contact between the transistor and the heat sink.
   • Use thermal compound to enhance heat transfer.

3. Biasing:

   • Properly bias the base to ensure the transistor operates in the desired region (cut-off, active, or saturation).
   • Use resistors to limit base current and protect the transistor from overcurrent.

4. Testing:

   • Test the transistor using a multimeter or transistor tester to verify its functionality.
   • Check for continuity and correct polarity before installation.

5. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight.
   • Keep the device in its original packaging to protect it from static electricity.

6. Applications:

   • Suitable for high-power amplifiers, switching circuits, and other applications requiring high current and voltage handling capabilities.

(For reference only)