Details

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BUY 2SC3571-AZ https://www.utsource.net/itm/p/12607867.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage	VEBO	-	-	6	V
Collector Current	IC	-	15	-	A
Base Current	IB	-	1.5	-	A
DC Current Gain	hFE	20	100	400	-
Transition Frequency	fT	-	150	-	MHz
Power Dissipation	PT	-	-	125	W
Junction Temperature	TJ	-40	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation, especially when operating at high currents.
   • Use thermal grease between the transistor and the heatsink to improve thermal conductivity.

2. Biasing:

   • Carefully set the base current (I_B) to achieve the desired collector current (I_C) while staying within the specified limits of the device.
   • Use a suitable biasing network to ensure stable operation over temperature variations.

3. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CEO), collector-base voltage (V_CBO), and emitter-base voltage (V_EBO).
   • Ensure that the junction temperature (T_J) does not exceed 150掳C to prevent thermal damage.

4. Storage:

   • Store the device in a dry environment with temperatures between -55掳C and 150掳C to avoid damage from moisture or extreme temperatures.

5. Handling:

   • Handle the device with care to avoid mechanical stress, which can lead to internal damage.
   • Use appropriate ESD protection to prevent electrostatic discharge damage.

6. Testing:

   • When testing the device, use a low current initially to verify proper operation before increasing to the rated values.
   • Measure the DC current gain (h_FE) to ensure it falls within the typical range for the device.

(For reference only)