Details

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BUY 2SK1081 https://www.utsource.net/itm/p/12607883.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	-	-	450	V
Gate-Source Voltage	V(GS)	-20	-	20	V
Drain Current	I(D)	-	-	6	A
Gate Threshold Voltage	V(GS(th))	1.5	3	5	V
On-State Resistance	R(DS(on))	-	0.5	1	惟
Input Capacitance	Ciss	-	1300	-	pF
Output Capacitance	Coss	-	220	-	pF
Reverse Transfer Capacitance	Crss	-	100	-	pF
Power Dissipation	P(TOT)	-	-	150	W
Junction Temperature	T(j)	-55	-	175	掳C
Storage Temperature	T(stg)	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage power dissipation.
   • Use a flat, clean surface for mounting to ensure good thermal contact.

2. Biasing:

   • Apply gate-source voltage (V(GS)) within the specified range to control the drain current (I(D)).
   • Avoid exceeding the maximum gate-source voltage (V(GS)) to prevent damage.

3. Operation:

   • Operate the device within the specified drain-source voltage (V(DS)) and drain current (I(D)) limits.
   • Ensure the junction temperature (T(j)) does not exceed 175掳C to avoid thermal runaway.

4. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Keep the device away from static electricity sources to avoid ESD damage.

5. Testing:

   • Use appropriate test equipment to measure parameters such as on-state resistance (R(DS(on))) and capacitances (Ciss, Coss, Crss).
   • Follow standard testing procedures to ensure accurate measurements.

6. Handling:

   • Handle the device with care to avoid mechanical stress.
   • Use anti-static wrist straps and mats to prevent ESD damage during handling.

7. Soldering:

   • Use a controlled soldering process to avoid overheating the device.
   • Follow recommended soldering profiles to ensure reliable connections.

By adhering to these guidelines, you can ensure optimal performance and longevity of the 2SK1081 MOSFET.

(For reference only)