SST27SF512-70-3C-NHE

SST27SF512-70-3C-NHE


Specifications
Details

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Parameter Description Value
Part Number Full part number SST27SF512-70-3C-NHE
Manufacturer Manufacturer of the component SST (Silicon Storage Technology)
Type Type of device Flash Memory
Density Memory density 512 Mbit
Voltage - Supply Operating voltage range 2.7V to 3.6V
Interface Communication interface type SPI (Serial Peripheral Interface)
Clock Speed Maximum clock frequency 70 MHz
Operating Temperature Range of operating temperatures -40掳C to +85掳C
Package / Case Package type 32-SOIC (Small Outline Integrated Circuit)
Mounting Type Mounting style Surface Mount
Write Cycle Time Time required for a write cycle 5ms
Erase Sector Size Size of sector that can be erased 64 Kbytes
Programming Voltage Voltage required for programming VCC + VPP

Instructions:

  1. Power Supply: Ensure the power supply is within the specified voltage range (2.7V to 3.6V) to avoid damage to the device.
  2. Clock Configuration: Set up the SPI clock speed not exceeding 70 MHz for reliable operation.
  3. Temperature Considerations: Operate the device within the temperature range of -40掳C to +85掳C to ensure longevity and performance.
  4. Programming and Erasing: Follow the timing specifications for write cycles and erase operations to prevent data corruption.
  5. Handling Precautions: Handle with care, especially during surface mount assembly processes, to avoid physical damage or electrostatic discharge (ESD).
  6. Installation: Ensure proper installation in a 32-SOIC package compatible socket or PCB layout.

For detailed application notes and specific programming instructions, refer to the official SST27SF512-70-3C-NHE datasheet provided by Silicon Storage Technology.

(For reference only)

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