Details

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BUY 2SC3694 https://www.utsource.net/itm/p/12607908.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	-	100	-	V
Collector-Base Voltage	VCBO	-	120	-	V
Emitter-Base Voltage	VEBO	-	5	-	V
Collector Current	IC	-	1.5	-	A
Base Current	IB	-	0.15	-	A
Power Dissipation	PT	-	65	-	W
Thermal Resistance, Junction to Case	R胃JC	-	2.5	-	掳C/W
Operating Temperature Range	TOP	-55	-	150	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Transition Frequency	fT	-	200	-	MHz
DC Current Gain (hFE)	hFE	20	70	200	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use a thermal compound between the transistor and the heat sink to improve thermal conductivity.

2. Biasing:

   • Set the base current (I_B) to achieve the desired collector current (I_C), considering the typical DC current gain (h_FE).
   • Ensure that the base-emitter voltage (V_BE) is within the specified range to avoid damage.

3. Power Dissipation:

   • Calculate the power dissipation (P_T) as the product of the collector-emitter voltage (V_CE) and the collector current (I_C).
   • Ensure that the power dissipation does not exceed the maximum rating to prevent overheating.

4. Temperature:

   • Operate the transistor within the specified operating temperature range to ensure reliable performance.
   • Store the transistor within the storage temperature range to avoid degradation.

5. Handling:

   • Handle the transistor with care to avoid mechanical damage.
   • Use appropriate ESD protection when handling the device to prevent electrostatic discharge damage.

6. Testing:

   • Test the transistor under controlled conditions to verify its parameters and performance.
   • Use a curve tracer or similar equipment to measure the characteristics accurately.

7. Circuit Design:

   • Design the circuit to include protective components such as diodes for reverse voltage protection and capacitors for noise filtering.
   • Ensure that the circuit layout minimizes parasitic inductances and capacitances to maintain stability and performance.

(For reference only)