Details

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BUY 2SC4511 https://www.utsource.net/itm/p/12607910.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	-	80	V
Emitter-Base Voltage	VEB	-6	-	-	V
Collector-Base Voltage	VCBO	-	-	80	V
Continuous Collector Current	IC	-	3.0	5.0	A
Pulse Collector Current	ICM	-	10.0	-	A
Base Current	IB	-	-	0.3	A
Power Dissipation	PT	-	65	-	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Use a thermal compound between the transistor and the heatsink for better thermal conductivity.

2. Biasing:

   • Set the base current (I_B) to ensure the transistor operates within its safe operating area (SOA).
   • Avoid exceeding the maximum collector current (I_C) and power dissipation (P_T).

3. Operation:

   • Do not exceed the maximum ratings for voltages and currents.
   • Operate within the specified temperature range to avoid damage to the device.

4. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads and body.

5. Testing:

   • Use appropriate test equipment and methods to verify the parameters.
   • Ensure the test conditions match the typical operating conditions to get accurate results.

(For reference only)