Details

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BUY 2SC4236 https://www.utsource.net/itm/p/12607911.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	1.5	A
Power Dissipation	PT	-	-	130	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	200	-	MHz

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the transistor is handled with care to avoid mechanical damage.
   • Use heat sinks to manage the power dissipation, especially when operating near the maximum power rating.

2. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly to avoid damage.
   • Use appropriate wire gauges to handle the current levels specified.

3. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage, collector-base voltage, and emitter-base voltage.
   • Keep the junction temperature within the specified range to ensure reliable operation.

4. Storage:

   • Store the transistor in a dry, cool place within the storage temperature range to prevent degradation.

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
   • Perform tests under controlled conditions to avoid exceeding the maximum ratings.

6. Dissipation Management:

   • For high-power applications, ensure adequate cooling by using heatsinks and thermal paste.
   • Monitor the temperature during operation to prevent overheating.

7. Soldering:

   • Use a low-temperature soldering iron to avoid damaging the transistor.
   • Ensure proper grounding to prevent electrostatic discharge (ESD) damage.

8. Circuit Design:

   • Design circuits to operate within the safe operating area (SOA) of the transistor.
   • Consider the thermal resistance and thermal time constants in your design.

(For reference only)