2SD718-O

2SD718-O


Specifications
Details

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Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (PD) 62.5 mW
Transition Frequency (FT) 300 MHz
Storage Temperature Range (TSTG) -55 to 150 掳C

Instructions for Use:

  1. Handling Precautions: Handle the 2SD718-O with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
  2. Mounting: Ensure proper mounting techniques are used to secure the device, avoiding excessive stress on the leads which can cause mechanical damage.
  3. Soldering: Solder within recommended temperature and time limits to prevent thermal damage. Typical soldering conditions should not exceed 260掳C for 10 seconds.
  4. Operational Limits: Do not exceed the maximum ratings specified in the parameter table to ensure reliable operation and longevity of the device.
  5. Storage Conditions: Store in a dry environment within the specified storage temperature range to prevent degradation.
  6. Application Circuits: Refer to application notes and circuit diagrams provided by the manufacturer for optimal performance in specific applications.
(For reference only)

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