Details

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BUY 2SC3507 https://www.utsource.net/itm/p/12607964.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V	IC = 150 mA
Collector-Base Voltage	VCBO	-	-	90	V	IC = 0
Emitter-Base Voltage	VEBO	-	-	6	V	IE = 5 mA
Collector Current	IC	-	-	150	mA	VCE = 30 V
Base Current	IB	-	-	15	mA	VCE = 30 V
DC Current Gain	hFE	40	120	400	-	IC = 150 mA, VCE = 10 V
Transition Frequency	fT	-	150	300	MHz	IC = 150 mA, VCE = 10 V
Power Dissipation	PT	-	-	625	mW	TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling:

   • Handle the 2SC3507 with care to avoid damage to the leads and the silicon chip.
   • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure that the leads are not bent excessively close to the body of the transistor to avoid mechanical stress.
   • Use a heat sink if the power dissipation exceeds the maximum rating under continuous operation.

3. Biasing:

   • Ensure that the base-emitter voltage (V_BE) is within the specified limits to avoid damage.
   • Use appropriate biasing circuits to maintain the transistor in the desired operating region (cut-off, active, or saturation).

4. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CEO), collector current (I_C), and power dissipation (P_T).
   • Operate the transistor within the specified temperature range to ensure reliable performance.

5. Storage:

   • Store the 2SC3507 in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the transistors in their original packaging until ready for use to protect against moisture and static damage.

6. Testing:

   • Use a multimeter or a dedicated transistor tester to verify the functionality of the 2SC3507 before installation.
   • Test the transistor under controlled conditions to avoid accidental overvoltage or overcurrent situations.

7. Soldering:

   • Use a soldering iron with a temperature no higher than 300掳C to avoid thermal damage to the transistor.
   • Complete the soldering process quickly to minimize exposure to high temperatures.

(For reference only)