Details

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BUY BDV64B https://www.utsource.net/itm/p/12607978.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCE	-	-	60	V	Maximum voltage between collector and emitter with the base open.
Emitter-Base Voltage	VEB	-2	-	5	V	Maximum voltage between emitter and base.
Collector-Base Voltage	VCB	-	-	60	V	Maximum voltage between collector and base with the emitter open.
Continuous Collector Current	IC	-	-	1.5	A	Maximum continuous current through the collector.
Pulse Collector Current	IC(P)	-	-	3	A	Maximum pulse current through the collector (tp = 1 ms).
Power Dissipation	PT	-	-	625	mW	Maximum power dissipation at TA = 25掳C.
Junction Temperature	TJ	-55	-	150	掳C	Operating temperature range for the junction.
Storage Temperature	TSTG	-65	-	150	掳C	Temperature range for storage.

Instructions:

1. Mounting: Ensure the transistor is mounted with adequate heat sinking if operating near maximum power dissipation.
2. Biasing: Use appropriate biasing circuits to ensure the transistor operates within its safe operating area (SOA).
3. Handling: Handle the device with care to avoid damage from electrostatic discharge (ESD).
4. Soldering: Solder the device at a temperature not exceeding 260掳C for a duration of 10 seconds.
5. Testing: Test the device under controlled conditions to verify its performance parameters.
6. Storage: Store the device in a dry, cool place away from direct sunlight and sources of heat.

(For reference only)