Details

---

BUY 2SA979 https://www.utsource.net/itm/p/12607983.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	50	-	V
Emitter-Base Voltage	VEB	-	5	-	V
Collector Current	IC	-	150	-	mA
Base Current	IB	-	15	-	mA
Power Dissipation	PT	-	625	-	mW
Operating Temperature	TA	-55	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Transition Frequency	fT	-	300	-	MHz
DC Current Gain (hFE)	hFE	40	150	400	-

Instructions for Using 2SA979:

1. Mounting:

   • Ensure that the transistor is mounted on a suitable heat sink if it will be operating at high power levels.
   • Use thermal compound between the transistor and the heat sink to improve thermal conductivity.

2. Biasing:

   • Proper biasing is crucial to ensure stable operation. Use a voltage divider network to set the base voltage.
   • Ensure that the base current (I_B) is sufficient to drive the collector current (I_C) but not excessive to avoid overheating.

3. Protection:

   • Use a series resistor with the base to limit the base current and protect the transistor from overdrive.
   • Consider using a flyback diode across inductive loads to protect against voltage spikes.

4. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table, especially for collector-emitter voltage (V_CE), collector current (I_C), and power dissipation (P_T).
   • Operate within the recommended temperature range to avoid thermal damage.

5. Testing:

   • Before final assembly, test the transistor using a multimeter or a dedicated transistor tester to ensure it meets the specified parameters.
   • Check for proper connections and solder joints to avoid short circuits or open circuits.

6. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
   • Handle the transistor with care to avoid mechanical damage and static discharge.

By following these guidelines, you can ensure reliable and efficient operation of the 2SA979 transistor in your circuits.

(For reference only)