Details

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BUY MJL21196 https://www.utsource.net/itm/p/12607989.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	300	V
Emitter-Collector Voltage	VEC	-	-	300	V
Collector-Base Voltage	VCB	-	-	300	V
Base-Emitter Voltage	VBE	-	2.5	3.0	V
Continuous Collector Current	IC	-	-	15	A
Continuous Emitter Current	IE	-	-	15	A
Power Dissipation	PT	-	-	180	W
Junction Temperature	TJ	-	25	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance (Junction to Case)	RthJC	-	1.0	-	掳C/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use a thermal compound between the transistor and the heatsink to improve thermal conductivity.

2. Biasing:

   • Apply a suitable base current (I_B) to ensure the transistor operates in the desired region (saturation, active, or cutoff).
   • Avoid exceeding the maximum base-emitter voltage (V_BE) to prevent damage.

3. Current Handling:

   • Do not exceed the maximum continuous collector current (I_C) or emitter current (I_E).
   • For high current applications, consider using multiple transistors in parallel or a higher power rating device.

4. Voltage Ratings:

   • Ensure that the applied voltages do not exceed the maximum ratings for V_CE, V_EC, and V_CB.
   • Use appropriate protection circuits (e.g., clamping diodes) to prevent overvoltage conditions.

5. Thermal Management:

   • Monitor the junction temperature (T_J) to avoid overheating.
   • The thermal resistance (R_thJC) should be considered when designing the cooling system.

6. Storage:

   • Store the transistor in a dry environment within the storage temperature range (T_STG).

7. Handling:

   • Handle with care to avoid mechanical stress or damage to the leads.
   • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.

(For reference only)