Details

---

BUY IRFU014. https://www.utsource.net/itm/p/12607999.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	55	-	V	Continuous
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	3.9	-	A	TC = 25掳C, VDS = 5V, VGS = 10V
Pulse Drain Current	ID(p)	-	7.5	-	A	tp = 10ms, Duty Cycle = 1%
Power Dissipation	PD	-	-	60	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Thermal Resistance	R胃JC	-	1.5	-	掳C/W	Junction to Case

Instructions:

1. Handling:

   • Handle the device with care to avoid damage to the leads and body.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Follow recommended soldering profiles to avoid thermal shock and mechanical stress.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure that the gate-source voltage (V_GS) is within the specified range to prevent gate damage.
   • Monitor the drain current (I_D) and power dissipation (P_D) to avoid overheating.

4. Testing:

   • Use the specified test conditions for accurate performance evaluation.
   • For pulse testing, ensure the duty cycle and pulse duration are within the specified limits.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use.

(For reference only)