Details

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BUY JNG15N120HS2 https://www.utsource.net/itm/p/12608018.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	120	-	m惟 @ ID=10A, VGS=10V	Resistance when the device is on
Gate Charge	QG	-	58	-	nC	Total gate charge
Input Capacitance	Ciss	-	2430	-	pF	Input capacitance
Output Capacitance	Coss	-	670	-	pF	Output capacitance
Reverse Transfer Capacitance	Crss	-	1980	-	pF	Reverse transfer capacitance
Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Gate-source voltage for threshold
Continuous Drain Current	ID	-	-	10	A	Continuous drain current at TC = 25掳C
Pulse Drain Current	IDM	-	-	65	A	Pulse drain current
Breakdown Voltage	BVdss	-	-	1200	V	Drain-source breakdown voltage
Power Dissipation	PD	-	-	1.2	W	Maximum power dissipation at TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	Maximum junction temperature

Instructions:

1. Handling: Use caution to avoid damage from electrostatic discharge (ESD). Handle only by the body of the package and not the leads.
2. Mounting: Ensure proper heat sinking if operating at high power levels. Follow manufacturer guidelines for mounting torque and methods.
3. Biasing: Operate within specified voltage and current limits. Ensure adequate gate drive voltage to minimize switching losses.
4. Testing: Verify all connections before applying power. Use appropriate safety equipment and procedures during testing.
5. Storage: Store in a dry, ESD-safe environment to prevent damage.
6. Applications: Suitable for switch-mode power supplies, motor control circuits, and other high-frequency switching applications where low on-resistance and fast switching are required.

(For reference only)