Details

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BUY 2SD1128 https://www.utsource.net/itm/p/12608029.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	450	V
Emitter-Collector Voltage	VECEO	450	V
Collector-Base Voltage	VCBO	500	V
Base-Emitter Voltage	VBE	6.0	V
Continuous Collector Current	IC	15	A
Continuous Base Current	IB	3.75	A
Power Dissipation	PD	200	W
Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	TSTG	-55 to +150	掳C
Transition Frequency	FT	12	MHz
Maximum Operating Frequency	FMAX	20	MHz

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Use a suitable heatsink with thermal compound to ensure efficient heat transfer.

2. Biasing:

   • Apply the base current (IB) carefully to avoid exceeding the maximum base current rating.
   • Use a current-limiting resistor in series with the base to control the base current.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (VCEO) or collector-base voltage (VCBO).
   • Ensure the junction temperature (TJ) remains within the specified range to prevent damage.

4. Storage:

   • Store the transistor in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads.

5. Testing:

   • Use a multimeter to check for continuity and resistance between the terminals before installation.
   • Test the transistor under controlled conditions to ensure it meets the specified parameters.

6. Safety:

   • Always disconnect power before making any connections or changes to the circuit.
   • Use appropriate safety equipment when handling high-voltage circuits.

(For reference only)