Details

---

BUY 3SK88 https://www.utsource.net/itm/p/12608031.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	Vceo	-	-	1200	V	Maximum voltage between collector and emitter with the base open.
Emitter-Collector Voltage	Veco	-	-	1200	V	Maximum voltage between emitter and collector with the base open.
Collector-Base Voltage	Vcbo	-	-	1200	V	Maximum voltage between collector and base with the emitter open.
Base-Emitter Voltage	Vbe	-	2.5	3.0	V	Maximum voltage between base and emitter.
Continuous Collector Current	Ic	-	-	10	A	Maximum continuous current through the collector.
Peak Collector Current	Icm	-	-	20	A	Maximum peak current through the collector.
Power Dissipation	Ptot	-	-	120	W	Maximum power dissipation at Tc = 25掳C.
Junction Temperature	Tj	-	-	150	掳C	Maximum junction temperature.
Storage Temperature Range	Tstg	-40	-	150	掳C	Temperature range for storage and operation.

Instructions for Use:

1. Mounting and Handling:

   • Handle the 3SK88 with care to avoid mechanical stress and damage.
   • Ensure proper heat sinking to manage the high power dissipation (Ptot).

2. Biasing:

   • Apply the appropriate base-emitter voltage (Vbe) to ensure the transistor is biased correctly for the desired operation mode (cut-off, active, or saturation).
   • Use a current-limiting resistor in series with the base to prevent excessive base current.

3. Current and Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (Vceo), collector-base voltage (Vcbo), or emitter-collector voltage (Veco).
   • Ensure the continuous collector current (Ic) does not exceed the rated value to avoid overheating and potential damage.
   • For transient conditions, do not exceed the peak collector current (Icm).

4. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it remains within the specified limits.
   • Use a suitable heatsink to dissipate the heat generated by the transistor during operation.

5. Storage and Operation:

   • Store the 3SK88 within the specified storage temperature range (Tstg) to prevent damage from extreme temperatures.
   • Operate the transistor within the recommended operating conditions to ensure reliable performance.

6. Testing:

   • Before final assembly, test the 3SK88 to verify its parameters and functionality.
   • Use appropriate test equipment and methods to avoid damaging the transistor during testing.

(For reference only)