Details

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BUY IRFR3410TRLPBF https://www.utsource.net/itm/p/12608036.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	13.5	-	m惟	VGS = 10V, ID = 20A
Gate Charge	QG	-	64	-	nC	VDS = 500V, VGS = 卤15V
Input Capacitance	Ciss	-	3470	-	pF	VDS = 500V
Output Capacitance	Coss	-	280	-	pF	VDS = 500V
Reverse Transfer Capacitance	Crss	-	95	-	pF	VDS = 500V
Total Power Dissipation	PD	-	-	180	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	175	掳C	-

Instructions for IRFR3410TRLPBF:

1. Mounting: Ensure the device is mounted on a suitable heatsink to maintain junction temperature within specified limits.
2. Gate Drive: Apply gate voltage (VGS) within the specified range to avoid damage or unreliable operation.
3. Power Dissipation: Monitor power dissipation to ensure it does not exceed the maximum rating of 180W at 25掳C case temperature.
4. Storage and Handling: Store in a dry environment within the storage temperature range (-55掳C to 175掳C).
5. Electrostatic Sensitivity: Handle with care as the device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures.
6. Capacitance Considerations: Be aware of input, output, and reverse transfer capacitances when designing circuits to prevent instability or oscillation issues.
7. Switching Applications: Optimize switching performance by considering the gate charge and ensuring fast transitions to minimize switching losses.

(For reference only)