Details
BUY FTA02N65 https://www.utsource.net/itm/p/12608044.html
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -650 | - | - | V | |
| Gate-Source Voltage | VGS | -15 | - | 15 | V | |
| Continuous Drain Current | ID | - | 2.0 | - | A | @ TC = 25掳C |
| Pulse Drain Current | ID(peak) | - | 4.7 | - | A | @ TC = 25掳C, tp = 10 渭s, IG = 4 A |
| Power Dissipation | PTOT | - | - | 93 | W | @ TC = 25掳C |
| Junction Temperature | TJ | - | - | 150 | 掳C | |
| Storage Temperature | TSTG | -55 | - | 150 | 掳C | |
| Thermal Resistance | R胃JC | - | 1.5 | - | 掳C/W | Junction to Case |
| R胃JA | - | 62 | - | 掳C/W | Junction to Ambient |
Instructions for Use:
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 650V.
- The gate-source voltage (VGS) should be within 卤15V.
Current Ratings:
- The continuous drain current (ID) should not exceed 2.0A at a case temperature of 25掳C.
- For pulse applications, the peak drain current (ID(peak)) can go up to 4.7A for a pulse duration of 10 渭s, with a gate current of 4A and a case temperature of 25掳C.
Power Dissipation:
- The maximum power dissipation (PTOT) is 93W at a case temperature of 25掳C. Ensure adequate heat sinking to manage power dissipation.
Temperature Limits:
- The junction temperature (TJ) must not exceed 150掳C.
- The storage temperature range (TSTG) is from -55掳C to 150掳C.
Thermal Management:
- The thermal resistance from the junction to the case (R胃JC) is 1.5掳C/W.
- The thermal resistance from the junction to the ambient (R胃JA) is 62掳C/W. Use appropriate heat sinks or cooling methods to maintain safe operating temperatures.
Handling Precautions:
- Handle the device with care to avoid mechanical damage.
- Use proper ESD protection to prevent damage from static electricity.
- Follow recommended soldering profiles to avoid thermal stress during assembly.
Mounting:
- Ensure that the device is securely mounted to the PCB and any necessary heat sinks.
- Use thermal paste or other thermal interface materials to enhance heat transfer between the device and the heat sink.
Testing:
- Perform initial testing under controlled conditions to verify proper operation.
- Monitor temperature and current levels during operation to ensure they remain within specified limits.
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