Details

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BUY 2SC3679. https://www.utsource.net/itm/p/12608061.html

Parameter	Symbol	Min	Typ.	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage	VEBO	-1.5	-	-5	V
Collector Current	IC	-	3	10	A
Base Current	IB	-	0.3	1	A
DC Current Gain	hFE	20	70	200	-
Transition Frequency	fT	-	200	-	MHz
Power Dissipation	PD	-	-	62.5	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SC3679 with care to avoid damage to its leads and body.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Biasing:

   • Set the base current (IB) appropriately to achieve the desired collector current (IC) while considering the typical hFE range.

3. Voltage Ratings:

   • Do not exceed the maximum ratings for VCEO, VCBO, and VEBO to prevent damage to the transistor.

4. Temperature Considerations:

   • Operate within the specified junction temperature range to ensure reliable performance.
   • Store in environments within the storage temperature range to avoid degradation.

5. Application:

   • Suitable for general-purpose switching and amplification applications where high current and moderate frequency operation are required.

6. Testing:

   • When testing or measuring parameters, use appropriate safety measures and equipment to avoid electrical hazards.

(For reference only)