Details

---

BUY SPW17N80C2 https://www.utsource.net/itm/p/12608094.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-10		800	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS(th)	2.0	4.0	6.0	V	Gate threshold voltage
Continuous Drain Current	ID		17		A	Continuous drain current at TC = 25掳C
Pulse Drain Current	IDM		90		A	Pulse drain current (t = 10 渭s, duty cycle = 1%)
Power Dissipation	PD			230	W	Maximum power dissipation
Junction Temperature	TJ	-55		175	掳C	Operating junction temperature range
Storage Temperature	TSTG	-55		175	掳C	Storage temperature range

Instructions for SPW17N80C2:

1. Handling Precautions:

   • The SPW17N80C2 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.

2. Mounting and PCB Design:

   • Ensure adequate heat sinking for the device if operating near its maximum power dissipation limits.
   • Follow recommended PCB layout guidelines to minimize inductance and ensure stable operation.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table to avoid damage to the device.
   • For reliable operation, keep the junction temperature within specified limits.

4. Gate Drive Requirements:

   • Apply gate drive voltages within the specified range to ensure proper switching performance.
   • Avoid applying excessive gate voltage to prevent gate oxide breakdown.

5. Switching Characteristics:

   • Refer to the datasheet for detailed switching characteristics including turn-on and turn-off times.
   • Optimize gate resistance (RG) for desired switching speed and efficiency.

6. Testing and Verification:

   • Perform initial testing under controlled conditions to verify correct operation.
   • Regularly monitor device performance parameters during operation.

(For reference only)