Details

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BUY 2SJ142 https://www.utsource.net/itm/p/12608103.html

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0, IE = 0	-	-	450	V
Emitter-Collector Voltage	VECS	IC = 0, IE = 0	-	-	450	V
Base-Emitter Voltage	VBE	IC = 10 mA, IE = 0	-	2.6	3.2	V
Base-Emitter Saturation Voltage	VBES	IC = 100 mA, IB = 10 mA	-	2.6	3.2	V
Collector-Emitter Saturation Voltage	VCES	IC = 100 mA, IB = 10 mA	-	1.8	2.5	V
Collector Current	IC	VCE = 300 V	-	10	-	A
Base Current	IB	VCE = 300 V	-	1	-	A
Power Dissipation	PT	TC = 25掳C	-	-	125	W
Junction Temperature	TJ	-	-	-	150	掳C
Storage Temperature Range	TSTG	-	-	-	-	-55 to 150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid applying voltages or currents beyond the specified limits.
   • Handle the device with care to prevent damage from electrostatic discharge (ESD).

2. Mounting and Soldering:

   • Ensure proper thermal management to keep the junction temperature within the specified range.
   • Follow recommended soldering profiles to avoid thermal shock.

3. Biasing and Operation:

   • Ensure that the base-emitter voltage (V_BE) is within the specified range to avoid damage.
   • Use appropriate base resistors to control the base current (I_B) and ensure stable operation.

4. Storage:

   • Store the device in a dry, cool place away from direct sunlight and extreme temperatures.

5. Testing:

   • Use the specified test conditions when measuring parameters to ensure accurate results.
   • Refer to the datasheet for detailed testing procedures and additional information.

6. Applications:

   • Suitable for high-voltage, high-current applications such as power amplifiers, switching circuits, and motor control systems.

(For reference only)