Details

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BUY IRGP4630D https://www.utsource.net/itm/p/12608118.html

Below is the parameter table and instructions for the IRGP4630D MOSFET:

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	( V_ )	-	600	-	V
Gate-Source Voltage	( V_ )	-15	0	20	V
Continuous Drain Current	( I_ )	-	24	-	A	( T_ = 25^circ C )
Pulsed Drain Current	( I_{D_{(p)}} )	-	110	-	A	( t_ = 10 mu s, I_ = 10 A )
Total Power Dissipation	( P_ )	-	250	-	W	( T_ = 25^circ C )
Junction Temperature	( T_ )	-	-	175	( ^circ C )
Storage Temperature	( T_ )	-55	-	150	( ^circ C )
Thermal Resistance	( R_{theta JC} )	-	0.68	-	( ^circ C/W )
Input Capacitance	( C_ )	-	1650	-	pF	( V_ = 400 V, f = 1 MHz )
Output Capacitance	( C_ )	-	100	-	pF	( V_ = 400 V, f = 1 MHz )
Gate Charge	( Q_g )	-	90	-	nC	( V_ = 15 V, V_ = 400 V )
Threshold Voltage	( V_{GS(th)} )	2.0	4.0	6.0	V	( I_D = 1 mA, I_G = 0.5 mA )
On-State Resistance	( R_{DS(on)} )	-	0.18	-	(Omega)	( V_ = 10 V, I_D = 24 A )
Gate-Source Leakage Current	( I_ )	-	-	100	nA	( V_ = 卤20 V )
Drain-Source Leakage Current	( I_ )	-	-	10	(mu A)	( V_ = 600 V, T_J = 25^circ C )

Instructions

1. Handling and Storage:

   • Store the device in a dry, cool place.
   • Handle with care to avoid static damage. Use ESD (Electrostatic Discharge) protection when handling.

2. Mounting:

   • Ensure proper thermal management by using a heatsink if necessary.
   • Apply thermal paste between the device and the heatsink for better heat dissipation.

3. Soldering:

   • Preheat the PCB to reduce thermal shock.
   • Use a soldering iron with a temperature of 300掳C to 350掳C.
   • Soldering time should not exceed 10 seconds per joint.

4. Biasing:

   • Ensure that the gate-source voltage (( V_ )) is within the specified range to prevent damage.
   • Use appropriate gate drive circuits to ensure reliable operation.

5. Operation:

   • Do not exceed the maximum drain-source voltage (( V_ )) or continuous drain current (( I_D )).
   • Monitor the junction temperature (( T_J )) to ensure it does not exceed 175掳C.

6. Testing:

   • Test the device under controlled conditions to verify its performance.
   • Use a suitable load to simulate real-world operating conditions.

7. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use appropriate personal protective equipment (PPE) as needed.

By following these parameters and instructions, you can ensure the reliable and safe operation of the IRGP4630D MOSFET.

(For reference only)