IRG4PC50KD

IRG4PC50KD


Specifications
SKU
12608123
Details

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Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCEO - - 600 V IC = 0, Tj = 25掳C
Collector-Base Voltage VCBO - - 600 V IC = 0, Tj = 25掳C
Emitter-Base Voltage VEBO - - 7 V IE = 0, Tj = 25掳C
Continuous Collector Current IC - - 30 A TC = 25掳C
Continuous Collector Current (TC = 100掳C) IC - - 18 A TC = 100掳C
Total Power Dissipation PT - - 180 W TC = 25掳C
Junction Temperature Tj - - 175 掳C -
Storage Temperature Range Tstg -55 - 150 掳C -

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid mechanical damage.
    • Use appropriate ESD protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within safe limits.
    • Follow recommended PCB layout guidelines for optimal thermal performance.
  3. Biasing:

    • Apply base-emitter voltage (VBE) carefully to avoid exceeding maximum ratings.
    • Use a current-limiting resistor to control base current (IB).
  4. Operational Limits:

    • Do not exceed the maximum collector-emitter voltage (VCEO), collector-base voltage (VCBO), or emitter-base voltage (VEBO).
    • Ensure that the continuous collector current (IC) does not exceed the rated value for the given case temperature (TC).
  5. Thermal Management:

    • Monitor the junction temperature (Tj) to ensure it remains below the maximum limit.
    • Use thermal paste and heatsinks to improve heat dissipation.
  6. Storage:

    • Store in a dry, cool place within the specified storage temperature range.
    • Avoid exposure to extreme temperatures and humidity.
  7. Testing:

    • Perform initial testing at room temperature to verify functionality.
    • Gradually increase load and environmental conditions to test limits.
  8. Safety:

    • Ensure all connections are secure and insulated to prevent short circuits.
    • Follow all relevant safety standards and regulations when designing circuits.
(For reference only)

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