Details

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BUY BCR5PM-12L https://www.utsource.net/itm/p/12608127.html

Parameter	Description	Value
Part Number	Full part number	BCR5PM-12L
Type	Device type	Power MOSFET
Package	Enclosure type	TO-220AB
VDS	Drain-to-source voltage	12V
ID	Continuous drain current	5A
RDS(on)	On-state resistance	0.018惟 (max) at VGS = 10V, TJ = 25掳C
VGS(th)	Gate threshold voltage	2V to 4V
ftp	Transition frequency	3MHz
Qg	Total gate charge	35nC
Eoss	Output capacitance energy	12nJ at VDS = 12V, ID = 5A
TJ	Junction temperature range	-55掳C to 150掳C
Storage Temperature	Operating temperature range for storage	-65掳C to 150掳C
Mounting Type	Installation method	Through-hole

Instructions:

1. Handling and Storage:

   • Store in a dry, cool place.
   • Handle with care to avoid damage to the leads and package.

2. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within the specified range.
   • Use a thermal compound between the device and the heat sink for better thermal conductivity.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Apply a suitable gate drive voltage to ensure reliable operation.

4. Operational Precautions:

   • Do not exceed the maximum ratings for V_DS, I_D, and T_J.
   • Avoid operating the device in conditions that could cause thermal runaway.

5. Testing:

   • Use appropriate test equipment and procedures to verify the parameters.
   • Ensure the device is properly biased during testing to avoid damage.

6. Soldering:

   • Preheat the PCB to reduce thermal shock.
   • Use a soldering iron with a temperature of 350掳C 卤 50掳C.
   • Solder each lead for no more than 3 seconds.

7. Disposal:

   • Dispose of the device according to local regulations for electronic waste.

(For reference only)