Details

---

BUY 2SB951 https://www.utsource.net/itm/p/12608139.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	800	V
Collector-Base Voltage	VCBO	-	-	800	V
Emitter-Base Voltage	VEBO	-	-	30	V
Collector Current	IC	-	5	15	A
Base Current	IB	-	-	2	A
Power Dissipation	PT	-	-	125	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Transition Frequency	fT	-	3	-	MHz

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified range.
   • Use a thermal compound between the transistor and the heatsink to improve thermal conductivity.

2. Biasing:

   • Apply base current (I_B) to control the collector current (I_C). The typical h_FE (current gain) should be considered for biasing calculations.
   • Avoid exceeding the maximum base current (I_B) to prevent damage.

3. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CEO), collector-base voltage (V_CBO), or emitter-base voltage (V_EBO).
   • Ensure that the power supply voltage is within the safe operating area (SOA) of the transistor.

4. Power Dissipation:

   • Calculate the power dissipation (P_T) to ensure it does not exceed the maximum rating. Use appropriate cooling methods if necessary.
   • Consider derating the power dissipation at higher ambient temperatures.

5. Temperature:

   • Operate the transistor within the specified junction temperature (T_J) and storage temperature (T_STG) ranges.
   • Monitor the temperature during operation to avoid overheating.

6. Handling:

   • Handle the transistor with care to avoid mechanical stress.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

7. Testing:

   • Test the transistor under controlled conditions to verify its performance parameters.
   • Use a curve tracer or similar equipment to check the characteristics if available.

8. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the transistor in its original packaging until ready for use to protect against moisture and static.

(For reference only)