Details

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BUY T75N06HD https://www.utsource.net/itm/p/12608151.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BVdss	-	-	600	V	Drain-to-Source Breakdown Voltage
Continuous Drain Current	Id	-	75	-	A	Continuous Drain Current at Tc=25掳C
Pulse Drain Current	Ipp	-	140	-	A	Pulse Drain Current (t=10ms, Tj=25掳C)
Gate Threshold Voltage	Vgs(th)	2.0	-	4.0	V	Gate Threshold Voltage
On-State Resistance	Rds(on)	-	35	-	m惟	On-State Resistance at Vgs=10V
Total Power Dissipation	Ptot	-	-	180	W	Total Power Dissipation at Tc=25掳C
Junction Temperature	Tj	-	-	175	掳C	Maximum Junction Temperature

Instructions for Use:

1. Handling and Storage: Store in a dry environment away from direct sunlight. Handle with care to avoid damage to the pins or body.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits. Follow manufacturer guidelines for mounting torque.
3. Electrical Connections: Verify all connections are secure and correct before applying power. Pay special attention to gate connections as they are sensitive to voltage spikes.
4. Operating Conditions: Do not exceed the specified maximum ratings. Ensure that the junction temperature does not exceed 175掳C.
5. Testing: Before final assembly, test the device under controlled conditions to ensure it meets the required specifications.
6. Safety Precautions: Always use appropriate safety measures when working with high voltages and currents.

(For reference only)