Details

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BUY 2SK2255 https://www.utsource.net/itm/p/12608164.html

Below is the parameter table and instructions for the 2SK2255 MOSFET:

2SK2255 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	( V_ )	-	-	450	V	-
Gate-Source Voltage	( V_ )	-	-	卤20	V	-
Continuous Drain Current	( I_ )	-	-	8	A	( T_C = 25^circ C )
Continuous Drain Current	( I_ )	-	-	5	A	( T_C = 100^circ C )
Pulse Drain Current	( I_{D(pulse)} )	-	-	24	A	( t = 10 text{ ms, } T_C = 25^circ C )
Gate Threshold Voltage	( V_{GS(th)} )	2.0	3.0	4.0	V	( I_D = 1 text )
On-State Resistance	( R_{DS(on)} )	-	0.65	-	惟	( V_ = 10 text, I_D = 5 text )
Input Capacitance	( C_ )	-	1500	-	pF	( V_ = 0 text )
Output Capacitance	( C_	-	220	-	pF	( V_ = 300 text )
Reverse Transfer Capacitance	( C_ )	-	250	-	pF	( V_ = 300 text )
Total Gate Charge	( Q_g )	-	75	-	nC	( V_ = 300 text, I_D = 5 text )
Maximum Junction Temperature	( T_J )	-	-	150	掳C	-
Storage Temperature Range	( T_ )	-55	-	150	掳C	-

Instructions for Use

1. Handling and Storage:

   • Handle the 2SK2255 with care to avoid static damage.
   • Store in a dry, cool place within the specified storage temperature range.

2. Mounting:

   • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within safe limits.
   • Use a thermal compound between the device and the heat sink for better thermal conductivity.

3. Biasing:

   • Apply the gate-source voltage (( V_ )) within the specified limits to avoid damaging the gate oxide.
   • Ensure that the gate-source voltage does not exceed 卤20V to prevent gate breakdown.

4. Current Limiting:

   • Do not exceed the continuous drain current ratings (( I_D )) at the specified case temperatures.
   • For pulse applications, ensure the pulse duration and current do not exceed the specified values to avoid overheating.

5. Capacitance Management:

   • Consider the input, output, and reverse transfer capacitances when designing the circuit to minimize switching losses and ensure stable operation.

6. Thermal Management:

   • Monitor the junction temperature (( T_J )) to ensure it does not exceed 150掳C.
   • Use appropriate cooling methods (e.g., forced air, liquid cooling) if necessary.

7. Testing:

   • Test the device under controlled conditions to verify its performance parameters.
   • Use a curve tracer or similar equipment to measure the on-state resistance and other key parameters.

By following these instructions, you can ensure reliable and efficient operation of the 2SK2255 MOSFET in your application.

(For reference only)