Details

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BUY 2SD526-Y https://www.utsource.net/itm/p/12608177.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	80	-	V
Emitter-Base Voltage	VEB	-	5	-	V
Collector Current	IC	-	1.5	-	A
Base Current	IB	-	0.15	-	A
Power Dissipation	PT	-	35	-	W
Storage Temperature Range	TSTG	-55	-	150	掳C
Operating Junction Temperature	TJ	-55	-	150	掳C
Transition Frequency	fT	-	100	-	MHz
Collector-Emitter Saturation Voltage	VCE(sat)	-	1.2	-	V
Base-Emitter Saturation Voltage	VBE(sat)	-	2.0	-	V
Storage Time	tstg	-	150	-	ns

Instructions for Use:

1. Handling:

   • Handle the 2SD526-Y with care to avoid mechanical damage.
   • Use appropriate ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation, especially when operating at high currents.
   • Follow the recommended PCB layout guidelines to ensure optimal performance and reliability.

3. Biasing:

   • Ensure that the base current (I_B) is sufficient to drive the transistor into saturation for switching applications.
   • For linear applications, operate within the specified safe operating area (SOA).

4. Temperature:

   • Monitor the junction temperature (T_J) to ensure it does not exceed the maximum rating of 150掳C.
   • Consider derating the power dissipation if operating in high ambient temperatures.

5. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range (-55掳C to 150掳C).
   • Avoid exposure to corrosive environments or excessive humidity.

6. Testing:

   • Use appropriate test equipment and methods to verify the parameters and functionality of the 2SD526-Y.
   • Refer to the datasheet for detailed testing procedures and specifications.

7. Safety:

   • Ensure all electrical connections are secure and insulated to prevent short circuits.
   • Follow all relevant safety standards and regulations when designing and using circuits containing the 2SD526-Y.

(For reference only)