Details

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BUY SRC65R900E https://www.utsource.net/itm/p/12608185.html

Parameter	Symbol	Value	Unit
Maximum Drain-Source Voltage	VDS(max)	650	V
Maximum Gate-Source Voltage	VGS(max)	卤20	V
Maximum Continuous Drain Current (Tc = 25掳C)	ID(max)	90	A
Maximum Pulse Drain Current (Tc = 25掳C, t = 10 渭s)	Ipp(max)	360	A
Total Power Dissipation (Tc = 25掳C)	PD(max)	240	W
Junction Temperature Range	TJ	-55 to +175	掳C
Storage Temperature Range	Tstg	-55 to +150	掳C
Thermal Resistance, Junction to Case	Rth(j-c)	0.5	掳C/W
On-State Resistance (VGS = 10V, ID = 90A)	RDS(on)	6.5	m惟
Input Capacitance (VDS = 300V, VGS = 0V)	Ciss	2800	pF
Output Capacitance (VDS = 300V, VGS = 0V)	Coss	450	pF
Reverse Transfer Capacitance (VDS = 300V, ID = 1mA)	Crss	250	pF
Gate Charge (VDS = 400V, ID = 90A, VGS = 10V)	Qg	135	nC

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the gate and source terminals.

2. Biasing and Operation:

   • Apply gate-source voltage (VGS) within the range of 卤20V to prevent gate oxide breakdown.
   • Ensure drain-source voltage (VDS) does not exceed 650V to avoid device failure.
   • Operate the device within the continuous drain current (ID) limit of 90A at 25掳C case temperature.

3. Thermal Management:

   • Use appropriate heatsinks and cooling methods to keep the junction temperature (TJ) between -55掳C and +175掳C.
   • Monitor the thermal resistance (Rth(j-c)) to ensure efficient heat dissipation.

4. Pulse Operation:

   • For pulse operation, ensure that the pulse duration does not exceed 10 渭s and the peak current (Ipp) does not exceed 360A.

5. Storage:

   • Store the device in a dry environment with temperatures between -55掳C and +150掳C.

6. Electrostatic Discharge (ESD) Protection:

   • Handle the device with ESD protection measures to prevent damage from static electricity.

7. Capacitance and Gate Charge:

   • Consider the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the gate drive circuit.
   • Account for the gate charge (Qg) to optimize switching performance and efficiency.

8. Safety and Compliance:

   • Ensure compliance with all relevant safety standards and regulations for the application.

By following these parameters and instructions, you can ensure reliable and efficient operation of the SRC65R900E MOSFET.

(For reference only)