Details

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BUY 2SD613 https://www.utsource.net/itm/p/12608209.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	400	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector Current	IC	-	-	1500	mA
Base Current	IB	-	-	150	mA
Power Dissipation	PT	-	-	62.5	W	TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	-	1.6	掳C/W

Instructions for Use:

1. Mounting:

   • Ensure that the mounting surface is flat and clean.
   • Apply a suitable thermal compound between the transistor and the heatsink to enhance heat dissipation.

2. Electrical Connections:

   • Connect the collector (C) to the positive supply or load.
   • Connect the emitter (E) to the ground or return path.
   • Connect the base (B) to the control circuit, ensuring that the base current does not exceed the maximum rating.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to avoid damage to the transistor.
   • Ensure that the junction temperature (T_J) does not exceed 150掳C.
   • Use a heatsink if the power dissipation exceeds the self-heating limit of the transistor.

4. Storage:

   • Store the transistor in a dry, cool place within the storage temperature range (-55掳C to 150掳C).
   • Handle with care to avoid mechanical damage.

5. Handling:

   • Use appropriate ESD (Electrostatic Discharge) protection when handling the transistor to prevent damage from static electricity.

(For reference only)