Details

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BUY NTD2955G https://www.utsource.net/itm/p/12608211.html

Below is the parameter table and instructions for the NTD2955G MOSFET:

NTD2955G Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	60	V
Gate-Source Voltage	VGS	-10	-	20	V
Continuous Drain Current	ID	-	37	-	A	TC = 25掳C
Continuous Drain Current	ID	-	26	-	A	TC = 100掳C
Pulse Drain Current (tp = 10ms)	ID(p)	-	74	-	A	TC = 25掳C
Power Dissipation	PD	-	-	220	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Gate Charge	QG	-	87	-	nC	VGS = 10V, ID = 10A
Input Capacitance	Ciss	-	1650	-	pF	VDS = 25V, f = 1MHz
Output Capacitance	Coss	-	450	-	pF	VDS = 25V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	110	-	pF	VDS = 25V, f = 1MHz
Threshold Voltage	VGS(th)	2.0	2.5	3.0	V	ID = 250渭A
On-State Resistance	RDS(on)	-	0.018	-	惟	VGS = 10V, ID = 37A
Maximum Junction-to-Case Thermal Resistance	R胃JC	-	-	0.5	掳C/W

Instructions for NTD2955G

1. Handling and Storage:

   • Handle the device with care to avoid damage to the leads and body.
   • Store in a dry environment within the specified storage temperature range (-55掳C to 150掳C).

2. Mounting:

   • Ensure proper thermal management by using a heatsink if necessary, especially when operating at high power levels.
   • Use appropriate soldering techniques to avoid thermal shock and ensure good electrical connections.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits (-10V to 20V).
   • Ensure that the drain-source voltage (V_DS) does not exceed 60V.

4. Current Handling:

   • Do not exceed the continuous drain current (I_D) ratings for the given case temperature.
   • For pulse operation, ensure that the pulse duration and frequency are within the safe operating area (SOA).

5. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
   • Use thermal paste or thermal interface materials between the device and the heatsink for better heat dissipation.

6. Testing:

   • When testing the device, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury to personnel.

7. ESD Protection:

   • The device is sensitive to electrostatic discharge (ESD). Use ESD protection measures such as wrist straps and grounded work surfaces.

8. Datasheet and Additional Information:

   • Refer to the full datasheet for more detailed information and application notes.

By following these instructions, you can ensure reliable and efficient operation of the NTD2955G MOSFET.

(For reference only)