Details

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BUY IR2130STRPBF https://www.utsource.net/itm/p/12608237.html

Parameter	Description	Min	Typical	Max	Unit
Supply Voltage (VDD)	Operating supply voltage for the high-side and low-side drivers	10	-	20	V
Under-Voltage Lockout (UVLO)	Minimum supply voltage to enable operation	-	10.5	-	V
Gate Drive Output Current (High Side)	Peak current available to drive the gate of the high-side MOSFET	-	2.5	-	A
Gate Drive Output Current (Low Side)	Peak current available to drive the gate of the low-side MOSFET	-	4.5	-	A
Propagation Delay (td)	Time delay between input signal and output response	-	60	-	ns
Maximum Operating Temperature (TJ)	Junction temperature range	-40	-	150	掳C
Input Capacitance (Ciss)	Capacitance at the input pin	-	120	-	pF
Storage Temperature Range (TSTG)	Temperature range for storage	-65	-	150	掳C

Instructions for Using IR2130STRPBF:

1. Power Supply Connection:

   • Connect the high-side supply (V_BH) and the low-side supply (V_DD) to their respective pins.
   • Ensure that the supply voltages are within the specified range (10V to 20V).

2. Under-Voltage Lockout (UVLO):

   • The device will not operate if the supply voltage is below 10.5V. Ensure that the supply voltage is above this threshold to avoid malfunction.

3. Gate Drive Configuration:

   • Connect the high-side gate driver (HO) to the gate of the high-side MOSFET.
   • Connect the low-side gate driver (LO) to the gate of the low-side MOSFET.
   • Use appropriate external components (e.g., bootstrap capacitors) to ensure proper operation of the high-side driver.

4. Input Signal:

   • Apply the input signal to the IN pin. The device will respond with a propagation delay of approximately 60ns.

5. Thermal Management:

   • Ensure that the junction temperature (T_J) does not exceed 150掳C. Use adequate heat sinking if necessary.

6. Storage and Handling:

   • Store the device in a temperature range of -65掳C to 150掳C.
   • Handle the device with care to avoid damage from electrostatic discharge (ESD).

7. Capacitance Considerations:

   • Be aware of the input capacitance (C_iss) of 120pF when designing the input circuitry.

8. Bootstrap Capacitor:

   • For high-side operation, a bootstrap capacitor must be used to provide the necessary voltage to the high-side driver. The capacitor should be connected between the V_BS and V_S pins.

9. Layout Recommendations:

   • Keep the layout compact to minimize parasitic inductances and capacitances.
   • Use short and wide traces for power and ground connections to reduce inductance.

By following these instructions, you can ensure reliable and efficient operation of the IR2130STRPBF.

(For reference only)