Details

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BUY MJL1302A https://www.utsource.net/itm/p/12608242.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	Vceo	-	-	800	V	Tc = 25掳C
Emitter-Base Voltage	Vebo	-	-	7	V	Tc = 25掳C
Collector Current	Icm	-	-	15	A	Pulse, Tc = 25掳C
Power Dissipation	Ptot	-	-	115	W	Tc = 25掳C
Junction Temperature	Tj	-	-	150	掳C	-
Storage Temperature	Tstg	-65	-	150	掳C	-

Instructions for Use:

1. Mounting and Heat Sinking:

   • Ensure adequate heat sinking to maintain junction temperature within specified limits.
   • Use thermal compound between the transistor and heat sink for efficient heat transfer.

2. Biasing:

   • Operate within specified voltage and current limits to avoid damage.
   • Proper biasing is essential to prevent thermal runaway and ensure stable operation.

3. Pulse Operation:

   • For pulse applications, ensure that peak currents do not exceed the maximum collector current (Icm).
   • Derate power dissipation for continuous operation to avoid overheating.

4. Handling Precautions:

   • Handle with care to avoid mechanical damage.
   • Use proper anti-static precautions to prevent damage from electrostatic discharge (ESD).

5. Testing:

   • Test under controlled conditions to ensure parameters are within specifications.
   • Verify mounting and connections before applying power.

(For reference only)