Details
BUY MIP2E1DMY https://www.utsource.net/itm/p/12608270.html
| Parameter | Description | Value |
|---|---|---|
| Part Number | Full part identification | MIP2E1DMY |
| Type | Type of device | MOSFET |
| Package | Package type | DPAK |
| VDS (V) | Drain-to-source voltage | 60 V |
| ID (A) | Continuous drain current | 4.7 A |
| RDS(on) (惟) | On-resistance at specified conditions | 0.055 惟 |
| Qg (nC) | Total gate charge | 38 nC |
| VGSS (V) | Gate-to-source voltage | 卤20 V |
| PD (W) | Power dissipation (maximum) | 29 W |
| Operating Temperature Range | Operating junction temperature | -55掳C to +175掳C |
| Storage Temperature Range | Storage temperature range | -65掳C to +150掳C |
Instructions for Use:
- Handling Precautions: Handle the device with care to avoid damage to the leads and body. Use proper ESD precautions.
- Mounting: Ensure that the mounting surface is clean and flat. Apply thermal paste if necessary to improve heat dissipation.
- Soldering: Use a soldering iron with a temperature not exceeding 300掳C. Ensure soldering time does not exceed 10 seconds per joint.
- Electrical Connections: Connect the source, drain, and gate terminals according to your circuit design. Verify polarity before applying power.
- Thermal Management: For high-power applications, consider using a heatsink or forced air cooling to maintain operating temperatures within specified limits.
- Testing: After assembly, perform electrical tests to ensure the device operates within its specified parameters.
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