Details

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BUY 20N60S5 https://www.utsource.net/itm/p/12608302.html

Parameter	Symbol	Min	Typical	Max	Unit
Breakdown Voltage	V(BR)DSS	-	600	-	V
Continuous Drain Current	ID	-	20	-	A
Pulse Drain Current	Ipp	-	180	-	A
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V
On-State Resistance	RDS(on)	-	0.18	-	惟
Total Power Dissipation	PD	-	300	-	W
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use a flat, clean surface for mounting to ensure good thermal contact.

2. Biasing:

   • Apply gate voltage (VGS) within the range of 2.0V to 6.0V to turn the device on.
   • Ensure the gate-to-source voltage does not exceed the maximum rating to avoid damage.

3. Current Handling:

   • Do not exceed the continuous drain current (ID) of 20A.
   • For pulse applications, do not exceed the pulse drain current (Ipp) of 180A.

4. Voltage Handling:

   • Ensure the drain-to-source voltage (VDS) does not exceed 600V to prevent breakdown.

5. Thermal Management:

   • Monitor the junction temperature (TJ) to ensure it stays below 175掳C.
   • Use appropriate cooling methods such as heatsinks or forced air cooling.

6. Storage:

   • Store the device in a dry, cool place with temperatures between -55掳C and 150掳C.

7. Handling:

   • Handle with care to avoid mechanical damage.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

8. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters.
   • Refer to the datasheet for detailed testing procedures.

(For reference only)