Details

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BUY 2SC3745 https://www.utsource.net/itm/p/12608316.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	Vceo	-	-	80	V	IC = 0.5A, Tc = 25掳C
Collector-Base Voltage	Vcbo	-	-	80	V	IC = 0, Tc = 25掳C
Emitter-Base Voltage	Vebo	-	-	5	V	IE = 5mA, Tc = 25掳C
DC Current Gain	hFE	100	400	700	-	IC = 150mA, VCE = 5V, Tc = 25掳C
Transition Frequency	fT	-	300	-	MHz	IC = 10mA, VCE = 3V, Tc = 25掳C
Maximum Collector Current	ICM	-	-	0.5	A	Tc = 25掳C
Power Dissipation	Ptot	-	-	625	mW	Tc = 25掳C
Junction Temperature	Tj	-	-	150	掳C	-

Instructions for Use:

1. Handling and Storage: Store in a dry environment away from direct sunlight. Handle with care to avoid damage to the leads.
2. Mounting: Ensure proper alignment of the transistor during mounting. Apply sufficient heat sink if necessary, especially for applications approaching maximum power dissipation.
3. Biasing: Operate within specified voltage and current limits. Ensure that the base-emitter junction is not subjected to reverse voltages exceeding its maximum rating.
4. Temperature Considerations: Monitor operating temperatures to ensure they do not exceed the maximum junction temperature. Adequate cooling measures should be taken for high-power applications.
5. Testing: Test the device under controlled conditions to verify performance parameters before integrating into circuits.
6. Applications: Suitable for general-purpose switching and amplification applications where moderate power handling is required.

(For reference only)