Details
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| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 60 | V | Maximum voltage between drain and source with the gate open. |
| Gate-Source Voltage | VGS | -20 | - | 12 | V | Maximum voltage between gate and source. |
| Continuous Drain Current | ID | - | 30 | - | A | Maximum continuous drain current at TC = 25掳C. |
| Pulse Drain Current | IDpeak | - | 90 | - | A | Maximum pulse drain current (tp < 10 ms, duty cycle < 1%). |
| Power Dissipation | PTOT | - | - | 80 | W | Maximum total power dissipation at TC = 25掳C. |
| Junction Temperature | TJ | - | - | 150 | 掳C | Maximum junction temperature. |
| Storage Temperature | TSTG | -55 | - | 150 | 掳C | Operating temperature range for storage. |
| Thermal Resistance | R胃JC | - | 1.5 | - | 掳C/W | Junction-to-case thermal resistance. |
| Input Capacitance | Ciss | - | 220 | - | pF | Input capacitance at VDS = 25V, VGS = 0V. |
| Output Capacitance | Coss | - | 40 | - | pF | Output capacitance at VDS = 25V, VGS = 0V. |
| Reverse Transfer Capacitance | Crss | - | 70 | - | pF | Reverse transfer capacitance at VDS = 25V, VGS = 0V. |
| Turn-On Delay Time | td(on) | - | 20 | - | ns | Turn-on delay time from 10% VGS to 10% VDS. |
| Rise Time | tr | - | 30 | - | ns | Rise time from 10% to 90% VDS. |
| Turn-Off Delay Time | td(off) | - | 20 | - | ns | Turn-off delay time from 90% VGS to 90% VDS. |
| Fall Time | tf | - | 30 | - | ns | Fall time from 90% to 10% VDS. |
Instructions:
Mounting and Handling:
- Ensure proper heat sinking to manage the power dissipation.
- Handle the device with care to avoid damage to the leads and the die.
Biasing:
- Apply the gate-source voltage (VGS) within the specified limits to prevent damage.
- Use appropriate gate drive circuits to ensure reliable switching.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.
- Use thermal paste and heatsinks to improve heat dissipation.
Storage:
- Store the device in a dry, cool environment within the specified storage temperature range (-55掳C to 150掳C).
Testing:
- Use appropriate test equipment to measure parameters like VDS, ID, and capacitances.
- Ensure that the test conditions match the typical operating conditions of the device.
Safety:
- Follow all safety guidelines when handling high-voltage and high-current circuits.
- Use protective gear such as gloves and goggles when necessary.
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