Details

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BUY 2SA1381D https://www.utsource.net/itm/p/12608346.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	450	V	-
Emitter-Base Voltage	VEB	-6	-	-1	V	-
Collector Current	IC	-	-	15	A	-
Base Current	IB	-	-	5	A	-
Power Dissipation	PT	-	-	130	W	TA = 25掳C
Storage Temperature	TSTG	-55	-	150	掳C	-
Operating Temperature	TA	-55	-	150	掳C	-
Junction Temperature	TJ	-	-	150	掳C	-
Thermal Resistance	RthJC	-	1.2	-	掳C/W	Junction to Case
Transition Frequency	fT	-	10	-	MHz	IC = 1A, VCE = 10V
Current Gain (DC)	hFE	10	70	200	-	IC = 1A, VCE = 10V

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside the specified operating range.
   • Handle the device with care to avoid mechanical damage.
   • Use appropriate static discharge precautions to prevent damage to the device.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation and keep the junction temperature within limits.
   • Follow recommended soldering profiles to avoid thermal shock.

3. Biasing:

   • Ensure that the base-emitter voltage (V_EB) does not exceed the maximum ratings.
   • The collector current (I_C) should be kept within the specified limits to avoid overheating and potential failure.

4. Testing:

   • Use a suitable test setup to measure parameters such as current gain (h_FE) and transition frequency (f_T).
   • Ensure that the test conditions match the typical operating conditions specified in the datasheet.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against static and physical damage.

(For reference only)