Details

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BUY 2SC2320 https://www.utsource.net/itm/p/12608351.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	-	80	V
Emitter-Base Voltage	VEB	-	-	6	V
Collector-Base Voltage	VCB	-	-	80	V
Collector Current	IC	-	150	300	mA
Base Current	IB	-	-	30	mA
Power Dissipation	PT	-	-	625	mW
Transition Frequency	fT	-	300	-	MHz
Storage Temperature Range	TSTG	-55	-	150	掳C
Operating Temperature Range	TA	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the 2SC2320 to temperatures outside its operating range.
   • Handle the transistor with care to avoid mechanical damage.
   • Use appropriate static discharge precautions to prevent damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure proper heat sinking if the device is expected to dissipate significant power.
   • Follow the recommended soldering profile to avoid thermal shock.

3. Biasing:

   • Ensure that the base current (I_B) is within the specified limits to avoid damaging the transistor.
   • Use appropriate biasing techniques to ensure stable operation.

4. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CE), collector current (I_C), and power dissipation (P_T).
   • Operate the device within its safe operating area (SOA) to prevent thermal runaway.

5. Testing:

   • Use a multimeter or a transistor tester to verify the functionality of the 2SC2320.
   • Test the device under controlled conditions to ensure it meets the required specifications.

6. Storage:

   • Store the 2SC2320 in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against moisture and static damage.

(For reference only)