Details

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BUY Q6016LH4 https://www.utsource.net/itm/p/12608385.html

Parameter	Description	Value
Part Number		Q6016LH4
Type	Power MOSFET
Package	TO-220
Polarity	N-Channel
VDSS (V)	Drain-to-Source Voltage	60 V
RDS(on) (惟)	On-State Resistance at VGS = 10 V	4 m惟
ID (A)	Continuous Drain Current	16 A
PTOT (W)	Total Power Dissipation (TC = 25掳C)	150 W
VGS(th) (V)	Gate Threshold Voltage	2.0 to 4.0 V
Qg (nC)	Total Gate Charge	67 nC
fT (MHz)	Transition Frequency	3.4 MHz
Operating Temperature	Junction Temperature Range	-55掳C to +150掳C
Storage Temperature	Storage Temperature Range	-65掳C to +150掳C

Instructions for Use

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use thermal compound between the MOSFET and heat sink for better thermal conductivity.

2. Biasing:

   • Apply gate voltage (V_GS) within the specified range to avoid damage.
   • Use a gate resistor to limit inrush current and prevent oscillations.

3. Operation:

   • Do not exceed the maximum drain current (I_D) or drain-to-source voltage (V_DSS).
   • Ensure that the total power dissipation (P_TOT) does not exceed the rated value to prevent overheating.

4. Storage:

   • Store in a dry, cool place to avoid moisture damage.
   • Handle with care to avoid mechanical stress on the leads and package.

5. Testing:

   • Use appropriate test equipment and methods to verify the parameters.
   • Ensure that the test conditions match the specified operating conditions.

6. Soldering:

   • Follow recommended soldering profiles to avoid thermal shock.
   • Preheat the component to reduce thermal stress during soldering.

7. Safety:

   • Always follow safety guidelines when handling high-voltage circuits.
   • Use protective equipment such as gloves and goggles when necessary.

(For reference only)