30F125.

30F125.


Specifications
SKU
12608464
Details

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Parameter Description Value
Device Type High-Voltage Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO) Maximum voltage between collector and emitter 1250 V
Emitter-Base Voltage (VEBO) Maximum voltage between emitter and base 7 V
Collector Current (IC) Continuous collector current 30 A
Power Dissipation (Ptot) Total power dissipation at Tc = 25掳C 125 W
Storage Temperature (Tstg) Operating temperature range -55掳C to +150掳C
Junction Temperature (Tj) Maximum junction temperature +150掳C
Thermal Resistance (Rth(j-c)) Thermal resistance, junction to case 1.6 K/W
Transition Frequency (fT) Transition frequency 10 kHz
Current Gain (hFE) DC current gain 10 to 50
Package Type TO-247-3L

Instructions for Use

  1. Handling and Storage:

    • Store the device in a dry, cool place.
    • Handle with care to avoid damage to the leads and the body of the transistor.
  2. Mounting:

    • Ensure proper heat sinking to manage the thermal resistance and maintain the junction temperature within safe limits.
    • Use appropriate mounting hardware and thermal compound to enhance heat transfer.
  3. Electrical Connections:

    • Connect the collector, base, and emitter terminals correctly.
    • Use insulated tools and equipment to prevent short circuits.
  4. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure that the operating temperature remains within the specified range to avoid thermal runaway.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the transistor.
    • Check for continuity and resistance values to ensure proper operation.
  6. Safety Precautions:

    • Always disconnect the power supply before making any connections or changes.
    • Use appropriate personal protective equipment (PPE) when handling high-voltage components.
  7. Troubleshooting:

    • If the transistor fails, check for overvoltage, overcurrent, or overheating conditions.
    • Replace the transistor if it is found to be faulty.
  8. Disposal:

    • Dispose of the device in accordance with local environmental regulations.
(For reference only)

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