Details

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BUY IRFI4212H https://www.utsource.net/itm/p/12608477.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	200	-	V
Gate-Source Voltage	VGS	-15	0	15	V
Continuous Drain Current	ID	-	3.9	-	A	@ TC = 25掳C, VGS = 10V
Pulse Drain Current	IDpeak	-	46	-	A	tp = 10 渭s, Duty Cycle = 1%
Total Power Dissipation	PD	-	87	-	W	@ TC = 25掳C
Junction Temperature	Tj	-	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for IRFI4212H:

1. Handling and Storage:

   • Ensure that the device is stored within the specified storage temperature range to avoid damage.
   • Handle with care to prevent electrostatic discharge (ESD) which can damage the MOSFET.

2. Mounting:

   • Mount the device in a way that allows for proper heat dissipation to maintain junction temperature within limits.
   • Use appropriate mounting hardware and thermal interface materials to ensure good thermal conductivity.

3. Biasing:

   • Apply gate-source voltage (VGS) within the specified limits to prevent gate oxide breakdown.
   • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating to avoid damaging the device.

4. Operation:

   • Operate the device within the continuous drain current (ID) limits at the specified case temperature.
   • For pulse applications, adhere to the pulse drain current (IDpeak) specifications including pulse width and duty cycle.

5. Testing:

   • When testing or evaluating the device, follow the conditions specified in the parameter table to obtain accurate results.

6. Safety:

   • Always refer to the data sheet for detailed safety and operational guidelines specific to this MOSFET model.

(For reference only)