Details
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| Parameter | Description | Value |
|---|---|---|
| Device Type | EPROM (Erasable Programmable ROM) | |
| Manufacturer | Macronix | |
| Part Number | M27C4002-70C1 | |
| Memory Size | 512 Kbit | 64K x 8 |
| Vcc Operating Voltage | Supply Voltage | 4.5V to 5.5V |
| Vpp Programming Voltage | Programming Voltage | 12.0V 卤 0.5V |
| Access Time | Typical Access Time | 70 ns |
| Data Retention | Data Retention Time | 10 years |
| Operating Temperature | Industrial Range | -40掳C to +85掳C |
| Package Type | DIP (Dual In-Line Package) | 28-Pin |
| Programming Method | UV Erasable, Electrically Programmable | |
| Write Cycle Time | Time to Program a Byte | 1 ms |
| Endurance | Write/Erase Cycles | 1000 cycles |
| Storage Temperature | Storage Temperature Range | -65掳C to +150掳C |
| Pin Configuration | Pin 1: A0, Pin 2: A1, ..., Pin 28: Vss | See datasheet for full details |
Instructions for Use:
Power Supply:
- Connect Vcc to the power supply (4.5V to 5.5V).
- Connect Vpp to the programming voltage (12.0V 卤 0.5V) during programming.
- Ground Vss.
Addressing:
- Apply the desired address to the address lines (A0 to A15).
Data Input/Output:
- For reading, connect the data lines (D0 to D7) to the system bus.
- For writing, apply the data to be programmed to the data lines (D0 to D7).
Programming:
- Apply Vpp to the appropriate pin.
- Set the chip select (CS) and output enable (OE) pins as required.
- Apply the address and data for the byte to be programmed.
- Wait for the write cycle time (1 ms) before applying the next address/data pair.
Erasing:
- Expose the device to UV light for at least 20 minutes to erase the contents.
Handling:
- Handle with care to avoid static discharge.
- Store in a dry, cool place when not in use.
For detailed pin configurations and timing diagrams, refer to the datasheet provided by Macronix.
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